View SSM5N05FU07_4134810.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SSM5N05FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM5N05FU
High Speed Switching Applications
* * * Optimum for high-density mounting in small packages Low on-resistance: Ron = 0.8 (max) (@VGS = 4 V) : Ron = 1.2 (max) (@VGS = 2.5 V) Low gate threshold voltage Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 12 400 800 300 150 -55~150 Unit V V mA mW C C
Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range
JEDEC JEITA

Note:
Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2L1B high temperature/current/voltage and the significant change in Weight: 6 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 0.32 mm x 5)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01
SSM5N05FU
Marking
5 4
Equivalent Circuit (top view)
5 4
DF
1 2 3
Q1
Q2
1
2
3
Electrical Characteristics (Ta = 25C) (Q1, Q2 common)
Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth Yfs RDS (ON) Ciss Crss Coss ton toff VDD = 3 V, ID = 100 mA, VGS = 0~2.5 V VDS = 3 V, VGS = 0, f = 1 MHz Test Condition VGS = 12 V, VDS = 0 ID = 1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 200 mA ID = 200 mA, VGS = 4 V ID = 200 mA, VGS = 2.5 V (Note2) (Note2) (Note2) Min 20 0.6 350 Typ. 0.6 0.85 22 9 21 60 70 Max 1 1 1.1 0.8 1.2 Unit A V A V mS pF pF pF ns

Note2: Pulse test
Switching Time Test Circuit
(a) Test circuit
2.5 V 0 10 s VDD = 3 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25C OUT IN 50 RL VDD 0V 10%
(b) VIN
2.5 V 90%
(c) VOUT
VDD
10% 90% tr ton tf toff
VDS (ON)
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration when using the device.
2
2007-11-01
SSM5N05FU
(Q1, Q2 common)
ID - VDS
1000 Common Source 800 10 4 3 2.5 2.3 Ta = 25C 100 1000 Common Source VDS = 3 V
ID - VGS
(mA)
(mA) Drain current ID
2.1 10
Drain current ID
600
Ta = 100C
400
1.9
1 25C -25C 0.1
1.7 200 VGS = 1.5 V 0 0
0.5
1.0
1.5
2.0
0.01 0
0.5
1.0
1.5
2.0
2.5
3.0
Drain-Source voltage
VDS (V)
Gate-Source voltage
VGS (V)
RDS (ON) - ID
2.0 Common Source Ta = 25C 1.6 1.6 2.0
RDS (ON) - VGS
Common Source ID = 200 mA
Drain-Source on-resistance RDS (ON) ()
1.2 2.5 V 0.8 VGS = 4 V
Drain-Source on-resistance RDS (ON) ()
1.2
0.8
Ta = 100C
25C 0.4 -25C
0.4
0 0
200
400
600
800
1000
0 0
2
4
6
8
10
Drain current ID (mA)
Gate-Source voltage
VGS (V)
RDS (ON) - Ta
2.0
Yfs - ID
Forward transfer admittance Yfs (mS)
5000 Common Source 3000 VDS = 3 V Ta = 25C
Common Source ID = 200 mA 1.6
Drain-Source on-resistance RDS (ON) ()
1.2
2.5 V
1000
0.8 VGS = 4 V 0.4
500 300
0 -25
0
25
50
75
100
125
150
100 10
30
50
100
300
500
1000
Ambient temperature Ta (C)
Drain current ID (mA)
3
2007-11-01
SSM5N05FU
(Q1, Q2 common)
IDR - VDS
1000 Common Source VGS = 0 800 Ta = 25C D 600 G IDR S 100 50 30
C - VDS
Drain reverse current IDR (mA)
(pF)
Ciss 10 5 3 Common Source VGS = 0 f = 1 MHz Ta = 25C 1 0.1 0.3 1 3 10 30 Crss
Capacitance C
Coss
400
200
0 0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
Drain-Source voltage
VDS
(V)
Drain-Source voltage
VDS (V)
t - ID
1000 Common Source 500 toff VGS = 0~2.5 V Ta = 25C tf 400
PD* - Ta
Mounted on FR4 board. (25.4 mm x 25.4 mm x 1.6 t 2 Cu Pad: 0.32 mm x 5) 300
Switching time t (ns)
300
100 50 30
Drain power dissipation PD*
300
(mW)
200 100
VDD = 3 V
ton tr
10 1
3
10
30
100
Drain current ID (mA)
0 0
20
40
60
80
100
120
140
160
Ambient temperature Ta (C)
*: Total rating
4
2007-11-01
SSM5N05FU
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
5
2007-11-01

▲Up To Search▲

Price & Availability of SSM5N05FU07

	To Download SSM5N05FU07 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .